New nanocluster to boost thin films for semiconductors

Oregon researchers have synthesized an elusive metal-hydroxide compound in sufficient and rapidly produced yields, potentially paving the way for improved precursor inks that could boost semiconductor capabilities for large-area applications.

The key to a "bottom-up" production of possibly the first heterometallic gallium-indium hydroxide nanocluster was the substitution of nitroso-butylamine as an additive in place of nitrosobenzene.

The substitute was identified during a comprehensive screening of potential alternatives by Zachary L. Mensinger, a doctoral student in the lab of University of Oregon chemist Darren W. Johnson. The additive acts to optimize and speed crystallization, allowing for reaction yields up to 95 percent. Comparable compounds traditionally made under caustic conditions often take months or even years to crystallize and result in low yields.

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